JPS57501656A - - Google Patents

Info

Publication number
JPS57501656A
JPS57501656A JP56503480A JP50348081A JPS57501656A JP S57501656 A JPS57501656 A JP S57501656A JP 56503480 A JP56503480 A JP 56503480A JP 50348081 A JP50348081 A JP 50348081A JP S57501656 A JPS57501656 A JP S57501656A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56503480A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS57501656A publication Critical patent/JPS57501656A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H01L21/26553—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
JP56503480A 1980-10-28 1981-10-15 Pending JPS57501656A (en])

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20164680A 1980-10-28 1980-10-28

Publications (1)

Publication Number Publication Date
JPS57501656A true JPS57501656A (en]) 1982-09-09

Family

ID=22746674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56503480A Pending JPS57501656A (en]) 1980-10-28 1981-10-15

Country Status (3)

Country Link
EP (1) EP0063139A4 (en])
JP (1) JPS57501656A (en])
WO (1) WO1982001619A1 (en])

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4725560A (en) * 1986-09-08 1988-02-16 International Business Machines Corp. Silicon oxynitride storage node dielectric
US4945394A (en) * 1987-10-26 1990-07-31 North Carolina State University Bipolar junction transistor on silicon carbide
US5389552A (en) * 1993-01-29 1995-02-14 National Semiconductor Corporation Transistors having bases with different shape top surfaces
FR3026558B1 (fr) 2014-09-26 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede d'activation de dopants dans une couche semi-conductrice a base de gan
FR3026556A1 (fr) 2014-09-26 2016-04-01 Commissariat Energie Atomique Procede de fabrication d'une couche semi-conductrice a base de gan ameliore
FR3026555A1 (fr) 2014-09-26 2016-04-01 Commissariat Energie Atomique Procede d'activation de dopants dans une couche semi-conductrice a base de gan par implantations et traitements thermiques successifs
FR3026557B1 (fr) 2014-09-26 2018-03-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de dopage d'un semi-conducteur a base de gan
CN112071904B (zh) * 2020-08-11 2024-01-30 陕西炬脉瑞丰科技有限公司 一种高压雪崩晶体管

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017887A (en) * 1972-07-25 1977-04-12 The United States Of America As Represented By The Secretary Of The Air Force Method and means for passivation and isolation in semiconductor devices
US3897273A (en) * 1972-11-06 1975-07-29 Hughes Aircraft Co Process for forming electrically isolating high resistivity regions in GaAs
US4033788A (en) * 1973-12-10 1977-07-05 Hughes Aircraft Company Ion implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates
US3914784A (en) * 1973-12-10 1975-10-21 Hughes Aircraft Co Ion Implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates
US4055443A (en) * 1975-06-19 1977-10-25 Jury Stepanovich Akimov Method for producing semiconductor matrix of light-emitting elements utilizing ion implantation and diffusion heating
US4058413A (en) * 1976-05-13 1977-11-15 The United States Of America As Represented By The Secretary Of The Air Force Ion implantation method for the fabrication of gallium arsenide semiconductor devices utilizing an aluminum nitride protective capping layer
DE2631873C2 (de) * 1976-07-15 1986-07-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand
FR2374743A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche a emetteur compose
US4143392A (en) * 1977-08-30 1979-03-06 Signetics Corporation Composite jfet-bipolar structure
GB2023340B (en) * 1978-06-01 1982-09-02 Mitsubishi Electric Corp Integrated circuits
JPS6028397B2 (ja) * 1978-10-26 1985-07-04 株式会社東芝 半導体装置の製造方法
US4267014A (en) * 1980-02-29 1981-05-12 The United States Of America As Represented By The Secretary Of The Navy Semiconductor encapsulant for annealing ion-implanted GaAs

Also Published As

Publication number Publication date
EP0063139A4 (en) 1984-02-07
EP0063139A1 (en) 1982-10-27
WO1982001619A1 (en) 1982-05-13

Similar Documents

Publication Publication Date Title
FR2473404B1 (en])
FR2472934B1 (en])
FR2473525B1 (en])
FR2473676B3 (en])
FR2473337B1 (en])
DE3153260A1 (en])
FR2473847B1 (en])
FR2473888B1 (en])
DE3153277A1 (en])
CH655684B (en])
FR2473805B1 (en])
FR2473248B1 (en])
FR2473999B1 (en])
FR2472929B1 (en])
FR2473157B3 (en])
FR2473555B1 (en])
FR2473982B1 (en])
FR2473886B1 (en])
CH655598B (en])
CH655568B (en])
FR2473189B1 (en])
FR2473474B1 (en])
FR2473188B1 (en])
DE3029945C2 (en])
FR2473844B3 (en])